Samsung Electronics has started to produce 48-layer flash memory chips 3D V-NAND capacity of 256 Gbps. The new chips are designed for use in solid-state storage, including multi-terabyte SSD.
In the third generation of multi-level memory 3D V-NAND is used three-dimensional structure of cells based on the technology 3D Charge Trap Flash (CTF). By increasing the number of layers the manufacturer has to place on a single chip over 85.3 billion cells, each of which can store three bits of information. This has allowed to double the capacity of microchips. The new solution also provides a 40% performance boost, and consumes 30% less energy than a 32-layer chips of the previous generation.
The Samsung believe that the presented chips can help increase sales SSD-drives, enterprise-class devices and datacenters. Recently, the manufacturer has also issued a consumer model series 850 and 850 PRO EVO volume of as much as 2 terabytes.